Interfacial processing and adhesion of diamond, diamond-like, and TiN films on metallic and polymeric substratesNARAYAN, J; VISPUTE, R. D; JAGANNADHAM, K et al.Journal of adhesion science and technology. 1995, Vol 9, Num 6, pp 753-767, issn 0169-4243Article

Pulsed excimer laser deposition Y₁Ba₂Cu₃O_7-x superconductor films on silicon with laser-deposited Y-ZrO₂ buffer layerOGALE, S. B; VISPUTE, R. D; RAO, R. R et al.Applied physics letters. 1990, Vol 57, Num 17, pp 1805-1807, issn 0003-6951Article

Misfit dislocations in low-temperature grown Ge/Si heterostructuresOKTYABRSKY, S; WU, H; VISPUTE, R. D et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1995, Vol 71, Num 3, pp 537-551, issn 0141-8610Article

Homo-and hetero-epitaxial growth of hexagonal and cubic Mg_xZn_1-x O alloy thin films by pulsed laser deposition techniqueHULLAVARAD, S. S; HULLAVARAD, N. V; PUGEL, D. E et al.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 16, pp 4887-4895, issn 0022-3727, 9 p.Article

Characteristics of in situ Mg-doped GaN epilayers subjected to ultra-high-temperature microwave annealing using protective capsMURTHY, Madhu; VISPUTE, R. D et al.Semiconductor science and technology. 2007, Vol 22, Num 10, pp 1151-1156, issn 0268-1242, 6 p.Article

Fabrication and characterization of epitaxial AlN/TiN bilayers on sapphireTALYANSKY, V; VISPUTE, R. D; ILIADIS, A. A et al.Thin solid films. 1998, Vol 323, Num 1-2, pp 37-41, issn 0040-6090Article

Diamond nucleation on epitaxially grown Y-ZrO₂ layers on Si(100)KANETKAR, S. M; KULKARNI, A. A; ANIL VAIDYA et al.Applied physics letters. 1993, Vol 63, Num 6, pp 740-742, issn 0003-6951Article

Sensor activity in pulsed laser deposited and ion implanted thin oxide thin filmsLAL, R; GROVER, R; VISPUTE, R. D et al.Thin solid films. 1991, Vol 206, Num 1-2, pp 88-93, issn 0040-6090Conference Paper

Catalyst-Free Direct Vapor-Phase Growth of Hexagonal ZnO Nanowires on α-Al₂O₃HULLAVARAD, S. S; HULLAVARAD, N. V; VISPUTE, R. D et al.Journal of electronic materials. 2010, Vol 39, Num 8, pp 1209-1217, issn 0361-5235, 9 p.Article

Growth of GaN films on PLD-deposited TaC substratesKIRCHNER, K. W; DERENGE, M. A; ZHELEVA, T. S et al.Journal of crystal growth. 2010, Vol 312, Num 19, pp 2661-2670, issn 0022-0248, 10 p.Article

Compositional origin of surface roughness variations in air-annealed ZnO single crystalsPUGEL, D. Elizabeth; VISPUTE, R. D; HULLAVARAD, S. S et al.Applied surface science. 2008, Vol 254, Num 8, pp 2220-2223, issn 0169-4332, 4 p.Article

Structural and Chemical Comparison of Graphite and BN/AlN Caps Used for Annealing Ion Implanted SiCJONES, K. A; WOOD, M. C; ZHELEVA, T. S et al.Journal of electronic materials. 2008, Vol 37, Num 6, pp 917-924, issn 0361-5235, 8 p.Article

Structural and chemical analysis of pulsed laser deposited Mg_xZn_1-xO hexagonal (x = 0.15,0.28) and cubic (x = 0.85) thin filmsHULLAVARAD, S. S; HULLAVARAD, N. V; PUGEL, D. E et al.Optical materials (Amsterdam). 2008, Vol 30, Num 6, pp 993-1000, issn 0925-3467, 8 p.Article

A comparison of graphite and AlN caps used for annealing ion-implanted SiCJONES, K. A; DERENGE, M. A; VISPUTE, R. D et al.Journal of electronic materials. 2002, Vol 31, Num 6, pp 568-575, issn 0361-5235Article

Ohmic metallization technology for wide band-gap semiconductorsILIADIS, A. A; VISPUTE, R. D; VENKATESAN, T et al.Thin solid films. 2002, Vol 420-21, pp 478-486, issn 0040-6090, 9 p.Conference Paper

Pulsed laser deposition of TiN, AiN, and GaN films on sapphireTALYANSKY, V; VISPUTE, R. D; JONES, K. A et al.SPIE proceedings series. 1997, pp 27-31, isbn 0-8194-2643-1Conference Paper

High-T_c superconducting thin films : issues of epitaxy, interfaces, doping and electrical transportOGALE, S. B; VISPUTE, R. D; KANETKAR, S. M et al.Indian journal of pure & applied physics. 1992, Vol 30, Num 10-11, pp 666-684, issn 0019-5596Article

Pulsed laser deposition of barium titanate films on siliconRASHMI NAWATHEY; VISPUTE, R. D; CHAUDHARI, S. M et al.Solid state communications. 1989, Vol 71, Num 1, pp 9-12, issn 0038-1098Article

Low leakage current transport and high breakdown strength of pulsed laser deposited HfO₂/SiC metal -insulator -semiconductor device structuresHULLAVARAD, S. S; PUGEL, D. E; JONES, E. B et al.Journal of electronic materials. 2007, Vol 36, Num 6, pp 648-653, issn 0361-5235, 6 p.Article

Advances in pulsed-laser-deposited AlN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applicationsHULLAVARAD, S. S; VISPUTE, R. D; LELIS, A et al.Journal of electronic materials. 2006, Vol 35, Num 4, pp 777-794, issn 0361-5235, 18 p.Article

The properties of annealed AlN films deposited by pulsed laser depositionJONES, K. A; DERENGE, M. A; ZHELEVA, T. S et al.Journal of electronic materials. 2000, Vol 29, Num 3, pp 262-267, issn 0361-5235Article

Annealing ion implanted SiC with an AlN capJONES, K. A; SHAH, P. B; KIRCHNER, K. W et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 61-62, pp 281-286, issn 0921-5107Conference Paper

Pulsed laser deposition of titanium nitride and diamond-like carbon films on polymersVISPUTE, R. D; NARAYAN, J; JAGANNADHAM, K et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 151-156, issn 0361-5235Conference Paper

Diamond nucleation at the organic liquid-metal interface by laser-induced reactive quenchingSHARMA, A. K; VISPUTE, R. D; JOAG, D. S et al.Materials letters (General ed.). 1993, Vol 17, Num 1-2, pp 42-48, issn 0167-577XArticle

Realization of Y₁Ba₂Cu₃O_7-δ/Y-ZrO₂ epitaxial configuration on silicon (100) by pulsed laser ablation without chemical removal of native surface oxideVISPUTE, R. D; KANETKAR, S. M; OGALE, S. B et al.Physica. C. Superconductivity. 1992, Vol 199, Num 1-2, pp 59-64, issn 0921-4534Article